The Effects of Arsine Pressure on the Compositions, Carrier Concentrations, Mobilities and Growth Rates of Epitaxial Layers of Ga(x)In(1-x)As Prepared by the VPE (Vapor-Phase Epitaxy)-Hydride Technique,
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
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The effect of three arsine partial pressure on the preparation of the ternary, GaxIn1-xAs, was investigated. Operational parameters are given for the preparation of Ga0.47In0.53As at these pressures. Increased arsine partial pressures decreased the gallium composition of the ternary. Growth rates have been determined as a function of gallium monochloride and arsine partial pressures. Increased mole fractions of arsine do not lower carrier concentrations or increase mobilities of the GaxIn1-xAs layers. Keywords include Vapor-Phase Epitaxy, GaxIn1-xAs, and III-V Semiconductors.
- Solid State Physics