Electron Irradiation of N Channel Silicon on Sapphire Insulated Gate Field Effect Transistors (IGFET).
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
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SOS, n-channel, insulated gate field effect transistors IGFETs were irradiated at room temperature wht a 30 MeV electton beam at doses from 104 to 106 Rads Si. The effects of the irradiation on IGFET perfomenace were evaluated by measuring threshold voltage decreased after each irradiation, up to the highest dose. The threshold voltage behavior was as expected for an n-channel IGFET undergoing gate oxide charge build-up. The total dose was not large enough to exhibit threshold voltage increases indicative of interface state generation. The IGFETs were allowed to anneal for 107 hours at room temperture. The threshold voltage recovered to approximately sixty-five percent of its pre-irradiation value within thirty hours. It then increased slowly to about seventy-five percent of its pre-irradiation value by the end of the observed annealing time. Threshold voltage rebound was not observed.
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- Solid State Physics