Accession Number:

ADA164413

Title:

InP:Fe and GaAs:Cr Picosecond Photoconductive Radiation Detectors.

Descriptive Note:

Master's thesis,

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s):

Report Date:

1985-12-01

Pagination or Media Count:

123.0

Abstract:

The dark current, impulse and square-pulse response measurements of photoconductive devices fabricated from two different types of materials, Gallium Arsenide with Chromium dopant GaAsr and Indium Phosphide with Iron dopant InPFe are reported. These devices have been subjected to irradiation from the S-band Electron Linear Accelerator LINAC with an energy fo 100 MeV at room temperature. Fluence ranged between 10 to the 13th power and 10 to the 16th power electronssq cm. Dark current decreases with increasing fluence for the GaAsCr devices whereas InPFe shows an increase in the dark current. Both types of materials exhibit extremely fast impulse response after the irradiation. Electron mobility, drift velocity and response speed decrease with increasing fluence. Response speeds of 100 ps are achieved by fast carrier relaxation in the semiconductor due to the introduction of trapping and recombination centers resulting from the irradiation damage. The GaAsCr, unlike the InPFe, more closely follows the longer square-pulse exhibiting non nonlinearity. All results are consistent with previously investigated neutron irradiated devices. Thesis.

Subject Categories:

  • Nuclear Instrumentation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE