Accession Number:

ADA164380

Title:

X-Band GaAs ISIS (Integrated Series IMPATT Structures) IMPATTS.

Descriptive Note:

Final rept.,

Corporate Author:

M/A-COM SEMICONDUCTOR PRODUCTS INC BURLINGTON MA

Personal Author(s):

Report Date:

1985-07-01

Pagination or Media Count:

72.0

Abstract:

The underlying purpose of this nine month program was to demonstrate the feasibility of synergistic power in Gallium Arsenide Integrated Series IMPATT Structures ISIS. In order to demonstrate such a feasibility, the program entailed the following Task 1 a Designing of appropriate doping profiles for GaAs X-band ISIS diodes b Growing Integrated Series IMPATT Structures using Vapor Phase Epitaxy VPE and c Characterizing the doping profiles of the ISIS wafers. Task 2 a Processing ISIS wafers grown by VPE into single mesa diodes with integral heat sinks b Processing ISIS wafers grown by Molecular Beam Epitaxy to be provided by NRL into single mesa diodes with integral heat sinks and c Assembling diodes of a and b into standard packages compatible with coaxial mounts.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE