Accession Number:

ADA164252

Title:

Epitaxial (100) GaAs Thin Films on Sapphire for Surface Acoustic Wave/Electronic Devices.

Descriptive Note:

Final rept. 30 Sep 84-28 May 85,

Corporate Author:

SPIRE CORP BEDFORD MA

Personal Author(s):

Report Date:

1985-12-01

Pagination or Media Count:

32.0

Abstract:

In the past year it has been demonstrated that undoped 111 single crystal gallium arsenide could be grown on 0112 sapphire using the metalorganic chemical vapor deposition MO-CVD growth technique. An interesting and unexpected result from this work was that the GaAs films grown had a 111 orientation instead of the proposed 100 orientation. Keywords include Metalorganic chemical vapor deposition, gallium arsenide, surface acoustic wave devices, and R-plane sapphire.

Subject Categories:

  • Line, Surface and Bulk Acoustic Wave Devices
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE