Epitaxial (100) GaAs Thin Films on Sapphire for Surface Acoustic Wave/Electronic Devices.
Final rept. 30 Sep 84-28 May 85,
SPIRE CORP BEDFORD MA
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In the past year it has been demonstrated that undoped 111 single crystal gallium arsenide could be grown on 0112 sapphire using the metalorganic chemical vapor deposition MO-CVD growth technique. An interesting and unexpected result from this work was that the GaAs films grown had a 111 orientation instead of the proposed 100 orientation. Keywords include Metalorganic chemical vapor deposition, gallium arsenide, surface acoustic wave devices, and R-plane sapphire.
- Line, Surface and Bulk Acoustic Wave Devices
- Solid State Physics