Accession Number:

ADA164103

Title:

Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1985-12-01

Pagination or Media Count:

152.0

Abstract:

The design and dc performance of enhanced Schottky barrier modulation doped transistors ESMODFETs is presented. The theory required to estimate the layer thicknesses and dopings required for a desired barrier height is developed. The experimental results show and increase from 0.8eV to 1.6eV for the ESMODFET versus the standard MODFET, with good correlation between theory and experiment. The ohmic contact resistance of the ESMODFET is comparable to that of the MODFET. The process used to fabricate the ESMODFET is similar to that used for the MODFET. Theses

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE