Development of a System to Produce Semiconductor Insulator Multi-Layer Structures.
Quarterly rept. no. 3, 1 Mar-31 May 85,
CLEMSON UNIV SC DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Pagination or Media Count:
The goals of the third quarter were to complete the construction of the epitaxial reactor to be used to grow the multilayer films and to begin to grow multiple silicon-insulator films. During this quarter the parts arrived for the completion of the epitaxial reactor and the reactor construction was completed. The equipment is now operational in Olin Hall. The system was pressure tested and all lines hold pressure over night. During preliminary runs to coat the silicon carbide susceptor with silicon, it was noticed that the parts of the equipment surrounding the reaction chamber become quite hot during operation of the reactor. There are several causes for this over heating. The hydrogen flow is presently limited by the hydrogen regulator being used in the system. A higher pressure regulator is needed to increase the hydrogen flow and increase the cooling that higher hydrogen flow will provide. The susceptor presently being used is 1 in. thick. It will be necessary to use a thinner susceptor to lower the thermal masss in the sysem. It may be necessary to water cool the reaction chamber. The first films grown in the system were silicon-on-sapphire films. The SOS films were used to determine the quality of the epitaxial system.
- Solid State Physics