Accession Number:

ADA162747

Title:

Electron Production, Electron Attachment, and Charge Recombination Process in High Pressure Gas Discharges.

Descriptive Note:

Annual scientific rept. 1 Aug 84-31 Jul 85,

Corporate Author:

SAN DIEGO STATE UNIV CA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1985-09-10

Pagination or Media Count:

32.0

Abstract:

The electron productions from two-photon-ionization of CS2, SO2 and CH33N at 193 nm were investigated and their coefficients were measured. The effect of space charge on the electron conduction pulse was observed as a function of charge density and the applied electric field. The electron attachment rate constants of H20 and C3F8 in buffer gases of Ar, N2, and CH4 were measured. The electron attachment rate constants for the gas mixtures of H20-Ar, C3F8-N2 and X3F8-CH4 increase with increasing EN. These characteristics are useful for the application of opening switches. The electron drift velocities of various gas mixtures were measured. Keywords Electron production electron attachment electron diffusion charge recombination electron conduction current temporary negative ion space charge effect plasma decay electron leakage from plasma electron attaching gas excimer laser parallel-plate drift-tube apparatus computer modeling carbon disulfide sulfur dioxide methyl nitride.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE