Accession Number:

ADA162096

Title:

Infrared Nonlinear Processes in Semiconductors.

Descriptive Note:

Semiannual technical rept. 1 Dec 84-31 May 85,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Report Date:

1985-06-24

Pagination or Media Count:

7.0

Abstract:

Observation of exceedingly narrow spin flip lines in n-InSb suggests the existence of spin waves in this crystal. SiP has been shown to have a large nonlinear optic coefficient at the metal-insulator transition the effect is believed to be due to electron promotion from localized to delocalized states. Preliminary nonlinear optic experiments imply that hole kinetics in p-type InGaAsGaAs strained layer superlattices are different from those of bulk p-GaAs. Author

Subject Categories:

  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE