Infrared Nonlinear Processes in Semiconductors.
Semiannual technical rept. 1 Dec 84-31 May 85,
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Observation of exceedingly narrow spin flip lines in n-InSb suggests the existence of spin waves in this crystal. SiP has been shown to have a large nonlinear optic coefficient at the metal-insulator transition the effect is believed to be due to electron promotion from localized to delocalized states. Preliminary nonlinear optic experiments imply that hole kinetics in p-type InGaAsGaAs strained layer superlattices are different from those of bulk p-GaAs. Author
- Solid State Physics