Analytical Investigations of Bulk Wave Resonators in the Piezoelectric Thin Film on Gallium-Arsenide Configuration.
Annual rept. 1 Sep 84-31 Aug 85,
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF MECHANICAL ENGINEERING AERONAUTICAL ENGINEERING AND MECHANICS
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Trapped energy modes in the piezoelectric thin film on semiconductor composite resonator are explained and contrasted with modes that do not trap energy. The results of calculation of the quality factor of the fundamental essentially thickness-extensional mode in the composite resonator due to radiation into the bulk semiconductor wafer are discussed. The calculations were performed for two configurations of the composite resonator thick in which the mode is not trapped and for a configuration in which the mode is trapped. The combination of materials was aluminum-nitride on gallium-arsenide. The calculations show that when trapping is not present the quality factor is a very rapidly varying function of the ratio of the composite resonator thickness to the wafer thickness and that the range of variation is very large, i.e., between one and two orders of magnitude. The calculations also reveal that when trapping is present the quality factor is always much larger and its range of variation with thickness ratio much smaller than when trapping is not present. Keywords include Piezoelectricity Elasticity Resonators Bulk waves Thin films Semiconductor wafers Composite resonators Energy trappings Radiation Quality factor and Plate vibrations.
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