Experimental and Theoretical Studies of Radiative and Nonradiative Processes in Semiconductors.
Final rept. 1 Feb 81-31 Jul 84,
CALIFORNIA INST OF TECH PASADENA
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The study of impurities and defect levels in semiconductors is of major scientific and technological interest. In many cases, the phenomena associated, particularly with deep levels, are not well understood even in this day. In the programs supported under this contract, a number of major contributions were made in this broad area of research. We developed a new form of spectroscopy which allows one to explore some of the excited states of various centers. We were the first to identify and study in detail a change in the structure of a defect due to a radiation with a laser, the so-called non-radiative induced defect reaction process. We studied the properties of some interesting deep levels in silicon and, in particular, attempted to develop an understanding of the origin of these deep levels which are thought to be associated with clusters of one of the classic shallow acceptors and iron.
- Solid State Physics