X-Ray Absorption Fine Structure Studies of Semiconductor Superlattices.
Annual rept. 1 Aug 84-31 Jul 85,
STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS
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First application of extended x-ray absorption fine structure EXAFS technique to measurements of interatomic distance, local order, and strain in semiconductor superlattices and heterostructures has been successfully demonstrated. This result opens many possibilities for obtaining unique structural information in various semiconductors. Keywords X-ray absorption Semiconductor superlattices Semiconducter heterostructures Gallium arsenides Indium arsenides Aluminum antimonides Indium gallium arsenide and Indium phosphides.
- Physical Chemistry