Accession Number:

ADA162031

Title:

X-Ray Absorption Fine Structure Studies of Semiconductor Superlattices.

Descriptive Note:

Annual rept. 1 Aug 84-31 Jul 85,

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS

Personal Author(s):

Report Date:

1985-08-30

Pagination or Media Count:

6.0

Abstract:

First application of extended x-ray absorption fine structure EXAFS technique to measurements of interatomic distance, local order, and strain in semiconductor superlattices and heterostructures has been successfully demonstrated. This result opens many possibilities for obtaining unique structural information in various semiconductors. Keywords X-ray absorption Semiconductor superlattices Semiconducter heterostructures Gallium arsenides Indium arsenides Aluminum antimonides Indium gallium arsenide and Indium phosphides.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE