Microwave Semiconductor Research Materials, Devices and Circuits.
Annual technical rept. 1 May 84-30 Apr 85,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy MBE and organometallic vapor phase epitaxy OMVPE are used for growth.
- Solid State Physics