Transient Velocity Assessment in Gallium Arsenide, and of Other GaAs Characteristics Related to Device Functions.
Final technical rept. Aug 1984-Aug 1985
OREGON GRADUATE CENTER BEAVERTON
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The final report for a 12-month program containing four tasks in two general areas of concern for GaAs device technology. Task I was to assemble and evaluate literature and other databases concerning high speed operation as assisted by velocity overshoot or ballistic transport a bibliography of 232 items appears with this Report. Task II involved assessment of the probability of achieving ballistic or other maximized electron speed with various sub-micron geometry GaAs devices, and the report here emphasizes the higher probability of eventual success with vertically-oriented devices, especially HBTs. Task III involved literature and other database assessment for EL2 and other extrinsic properties of GaAs it is noted here that, despite intense study by many, the atomic nature of EL2 is not determined, and that research on the high temperature defect chemistry of GaAs is desirable. Task IV involved mapping measurements of EL2 and other properties of SI GaAs wafers, and the part of our work carried out in support of DARPA needs is described. Keywords include Gallium arsenide submicron devices ballistic transport velocity saturation semiconductor substrate evaluation semi-insulating materials and electron defect evaluation.
- Radiofrequency Wave Propagation