Accession Number:

ADA160782

Title:

'Metallic Regime of Silicon Inversion Layers, Energy Levels, and Transport Properties.'

Descriptive Note:

Final rept. 15 Sep 80-14 Sep 82,

Corporate Author:

YALE UNIV NEW HAVEN CT DEPT OF APPLIED PHYSICS

Personal Author(s):

Report Date:

1984-01-13

Pagination or Media Count:

27.0

Abstract:

In n-channel silicon inversion layer the small resistance changes with temperature below 4K have been observed and the physical mechanisms quantified. These mechanisms are a temperature dependent elastic scattering which is mostly mitigated by impurities, and the many body effect upon the elastic scattering. In high quality silicon MOSFETs, inelastic diffusion lengths of about 2 micrometers have been observed, which demonstrated quasione dimensional transport processes in submicron devices. Keywords silicon inversion layers elastic scattering inelastic scattering submicron devices Metal oxide semiconductors Field effect transistors.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE