Accession Number:

ADA160536

Title:

The Effect of Bulk Traps on the InP (Indium Phosphide) Accumulation Type MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor),

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES

Personal Author(s):

Report Date:

1985-01-01

Pagination or Media Count:

43.0

Abstract:

The enclosed reports represent work performed at USCD on Contract N00014-82-K-2032 entitled Surface and Interfacial Properties of InP and provides a full account of the results obtained during the contract period May 1, 1984 through April 31, 1985. The paper Space charge-limited currents and trapping in semi-insulating InP has now been published in Electron. Device Letters, volume EDL-6, page 356 1985. The manuscript Effect of bulk traps on the InP accumulation type MISFET will be presented as an invited talk at the fall meeting in the Journal of the Electrochemical Society. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE