Accession Number:

ADA160403

Title:

Chemical Bonding, Interdiffusion and Electronic Structure at InP, GaAs, and Si-Metal Interfaces.

Descriptive Note:

Summary rept. 1 Oct 84-30 Sep 85,

Corporate Author:

XEROX WEBSTER RESEARCH CENTER NY

Personal Author(s):

Report Date:

1985-10-01

Pagination or Media Count:

266.0

Abstract:

An experimental program investigates the interface electronic states and band structure at Germanium Arsenides, Indium Phosphides and Silicon-metal interfaces formed by chemical reaction and interdiffusion at room temperature, elevated temperatures, as well as following pulsed-laser annealing uses soft x-ray photoemission spectroscopy SXPS and Auger electron spectroscopy AESdepth profiling to characterize atomic redistribution and new chemical bonding near the surfaces and interfaces on an atomic scale refines the technique of cathodoluminescence spectroscopy CLS for investigations of new compound and defect formation at buried metal-semiconductor interfaces and employs temperature-dependent current-voltage and capacitance-voltage measurements to characterize the electronic properties and spatial distribution of interface states of metal-InP interfaces prepared and processed under carefully controlled conditions. The work can be grouped into four areas 1 chemical and electronic structure of buried III-V and II-VI compound semiconductor-metal interfaces, 2 localized chemical reactions at Aluminum interfaces with III-V compound semiconductors promoted by pulsed-laser annealing as well as laser-induced oxidation of Si, 3 eletrical characterization of the UHV-prepared Al-InP 110 interface, and 4 control of competitive Ti-Si and Ti-SiO2 interfacial reactions by rapid thermal annealing.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE