Accession Number:

ADA159446

Title:

Fundamental Studies and Device Development in Beta Silicon Carbide.

Descriptive Note:

Semiannual progress rept. 1 Mar-31 Aug 85,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS ENGINEERING

Personal Author(s):

Report Date:

1985-08-31

Pagination or Media Count:

60.0

Abstract:

The research of this reporting period has involved the growth of large area thin films of Beta-SiC the study of the effect of defects at the interface region on dopant getting various aspects of doping via ion implantation, calculation of the critical energies to cause amorphization, etching of the resultant amorphous layer, and charge carrier activation during annealing np junction development via ion implantation, and oxidation and reactive ion etching studies. Originator supplied keywords include Chemical vapor deposition Electronic materials Electron microscopy Secondary ion mass spectroscopy Electrical properties MOS device Rutherford Backscattering Oxidation Schottky diode.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE