Accession Number:

ADA159403

Title:

Integrated Optoelectronic Circuits Utilizing InGaAsP Grown by Molecular Beam Epitaxy.

Descriptive Note:

Annual rept. 1 Jan 83-25 Nov 84,

Corporate Author:

GEORGIA TECH RESEARCH INST ATLANTA

Personal Author(s):

Report Date:

1984-11-25

Pagination or Media Count:

54.0

Abstract:

A phosphorus source suitable for InP or quaternary MBE growth was developed and tested. The source cracks the P4 molecules sufficiently to greatly improve the phosphorus sticking coefficient the flux can be monitored at all times during growth but the long term stability of the source as presently manufactured is not sufficient for quaternary alloy ratio control and the source has a useful lifetime compatible with the requirements of good MBE layer growth. A duplicate arsenic source was also developed and tested. Indium phosphide layers have been grown with excellent room temperature mobility and the necessity of a cracking phosphorus source confirmed. Electrical and optical characterization of the layers indicate that the layers are highly compensated which is consistent with the poor quality of the background vacuum during growth. Little improvement can be anticipated in the present MBE system. Many quaternary layers have been grown with the new phosphorus and arsenic sources. The best layers grown on InP were matched to within 1.0. It is expected that with the data obtained thus far, the lattice match can be consistently improved only with a positive, stable real time flux control on both the As and the P sources. A new MBE system for phosphorus compounds has been designed and is being fabricated. The new system can accommodate 1.5 in. diameter substrates, has sample rotation, and two stages of vacuum interlocking for sample introduction.

Subject Categories:

  • Crystallography
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE