A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron into Silicon.
Interim rept. 1 Nov 76-30 Apr 77,
STANFORD UNIV CALIF SOLID-STATE ELECTRONICS LAB
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A multi-stream diffusion model is proposed for te calculation of the annealing behavior of boron that is ion implanted into silicon at room temperature and subsequently annealed. This model is capable of predicting both the redistribution and the electrical activation of boron during the anneal, as a realistic model should. The calculated results compare very samples that are implanted at room temperature with boron in the dose range from 10 to the 14 power to 10 to the 16th power ionssq cm and subsequently annealed in the temperature range from 800 C to 1000 C. This range of dose and annealing conditions includes both the typical applications of ion implantation as it is applied in the fabrication of devices nad the unconventional cases of high dose implants and low temperature annealing. Author