Accession Number:

ADA159124

Title:

Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

• Tam, S.
• Ko, P. K.
• Hu, C.

Report Date:

1984-09-01

Pagination or Media Count:

11.0

Abstract:

The lucky-electron concept is successfully applied to the modeling of channel hot-electron injection in n-channel MOSFETs although the result can be interpreted in terms of electron temperature as well. This results in a relatively simple expression that can quantitatively predict channel hot- electron injection current in MOSFETs. The model is compared with measurements on a series of n-channel MOSFETs and good agreement is achieved. In the process, new values for many physical parameters such as hot-electron scattering mean-free path, impactionization energy are determined. Of perhaps even greater practical significance is the quantitative correlation between the gate current and the substrate current that this model suggests. Author

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *INTEGRATED CIRCUITS
• *METAL OXIDE SEMICONDUCTORS
• ELECTROMAGNETIC SCATTERING
• ELECTRONS
• ENERGY
• GATES(CIRCUITS)
• INJECTION
• IONIZATION
• N TYPE SEMICONDUCTORS
• REPRINTS
• SUBSTRATES

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE