Accession Number:

ADA159124

Title:

Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

Report Date:

1984-09-01

Pagination or Media Count:

11.0

Abstract:

The lucky-electron concept is successfully applied to the modeling of channel hot-electron injection in n-channel MOSFETs although the result can be interpreted in terms of electron temperature as well. This results in a relatively simple expression that can quantitatively predict channel hot- electron injection current in MOSFETs. The model is compared with measurements on a series of n-channel MOSFETs and good agreement is achieved. In the process, new values for many physical parameters such as hot-electron scattering mean-free path, impactionization energy are determined. Of perhaps even greater practical significance is the quantitative correlation between the gate current and the substrate current that this model suggests. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE