Accession Number:

ADA158516

Title:

In Situ Selected Area Doping of GaAs by Molecular Beam Epitaxy.

Descriptive Note:

Final rept. 1 Jun 83-31 May 85,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1985-07-01

Pagination or Media Count:

68.0

Abstract:

This final report contains a description of the technical progress for the final six month period of this program and a summary of the most important previous results of this program. In this final period a new in situ selected area doping process was investigated which appears to be the most promising of the three evaluated in this program. During an investigation of UV photolytic deposition of tin from organotin compounds, it was found that during the initial stages of deposition with halogenated tin compounds, etching of the semiconductor surface occurs affecting the surface stoichiometry. This result has important implications for application of UV photolytic deposition of metals on semiconductors as well as photochemical etch processing. Initial experiments involving in situ photochemical etching of GaAs MBE substrates was carried out. Originator supplied keywords include Selected Area Doping GaAs Arsenic GrowthRegrowth. Author

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE