Accession Number:

ADA158434

Title:

Investigation of Phase Transitions.

Descriptive Note:

Final rept. 20 Jun 83-2 Mar 85,

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL

Personal Author(s):

Report Date:

1985-08-12

Pagination or Media Count:

10.0

Abstract:

An investigation of layers of CuCl grown on the III face of silicon has been undertaken. Detailed studies using ESCA for analysis have led to the development of an effective etching and cleaning procedure for silicon surfaces. CuCl layers can not be grown by vapor phase transport, nor from liquid fluxes using a dipping technique, but polycrystalline layers may be grown using an improved slider-boat technique. The CuClsilicon specimens exhibit a dielectric anomaly. The temperature of the onset of the dielectric anomaly varies from specimen to specimen, and it also depends on the history of the specimen. Materials research designed to determine the factors which affect this phenomenon is underway. Originator supplied keywords include Semiconductors, Epitaxial films, Rutherford backscattering, Magnetic susceptibility.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE