Accession Number:

ADA158298

Title:

Completely Consumed Carbide (C3) - A New Process for Dielectric Isolation,

Descriptive Note:

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY CENTER FOR INTEGRATED ELECTRONICS

Personal Author(s):

Report Date:

1985-05-01

Pagination or Media Count:

12.0

Abstract:

A new process for dielectric isolation based on the use of silicon carbide has been investigated. This process uses the lower oxidation rate of SiC compared to Si to provide local regions of thick field oxide. If the local oxidation process results is the complete consumption of the carbide C3 film, then a high quality MOS structure is obtained. In this paper, this C3 process is compared to the standard silicon nitride LOCOS process. MOS capacitors and Schottky barrier diodes have been fabricated with both techniques for varying pad oxide thickness 0, 100, 200 A. The effect of high temperature anneal on these structures has been investigated. The electrical properties of these devices have been measured. This includes lifetime, breakdown voltage and I-V characteristics. For the minimum birds beak case no pad oxide the C3 process results in superior electrical properties over the standard nitride process. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE