MBE Growth of CdTe and Hg sub 1-x Cd sub x Te Films and Multilayer Structures.
Final rept. 1 Jan 83-31 Dec 84,
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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The MBE growth of CdTe and Hg1-xCdxTe films on InSb and CdTe substrates has been investigated. Growth conditions for high-perfection CdTe films, exactly lattice-matched to InSb substrates, have been identified. These films are ideal for substrates for Hg1-xCdxTe film growth since they are free from low-angle grain boundaries and also provide electrical isolation of the Hg1-xCdxTe film from the InSb substrate. Magnetophotoconductivity studies of abrupt n-CdTep-InSb heterojunctions indicate the presence of an n-type inversion layer in the InSb. This could be the basis for a new type of FET device. Conditions for growth of Hg1-xCdxTe films have been explored and films of suitable quality for LWIR device fabrication have been prepared. Originator supplied keywords include thin films molecular beams epitaxy growth MBE alloys improvement structure cadmium telluride control mercury cadmium telluride doping extrinsic multilayers compounds III-V and compounds II-IV.
- Solid State Physics