Novel Approaches to Passivation of Si for VHSIC - Based on Fundamental Studies.
Final rept. 28 Mar 82-28 Mar 85,
STANFORD UNIV CA
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The primary focus of this work was the exploration of fundamental aspects of the oxidation of semiconductor surfaces with a view to addressing some of the problems that have arisen in industry in the growth of ultra thin silicon dioxide layers that are a requirement of smaller, faster CMOS devices. The work falls into three categories, each concerned with a problem that is related to the central issue in a different way 1 A study of th fundamental properties of the diamond surface. 2 A study of rare earth metalsemiconductor interfaces and compounds. 3 A study of the fundamental characteristics of the oxidation of silicon and the production of thin silicon oxide layers. Keywords include Silicon Integrated circuits Oxidation Passivation Surface chemistry Layers Thin films Silicon dioxide Diamond Interfaces and Rare earth compounds.
- Electrical and Electronic Equipment
- Solid State Physics