Millimeter-Wave Circuit Analysis and Synthesis.
Final rept. 1 Mar 81-30 Apr 85,
MICHIGAN UNIV ANN ARBOR SOLID-STATE ELECTRONICS LAB
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This final report is a brief description of the work carried out under this program. In addition to the work described here, several technical reports and journal articles were issued which describe the work performed in much greater detail. These reports and articles are available. The work carried out in this program included the following IMPATT device modeling and prediction of Si, GaAs and InP IMPATT performance at millimeter wavelengths and their optimum design modeling and characterization of GaAs MESFETs and measurement of small- and large-signal equivalent circuit parameters design and fabrication of a monolithic GaAs integrated circuit FET-varactor doubler and analysis and design of a YIG loaded waveguide for magnetostatic device applications, such as tunable delay lines. Keywords include IMPATT devices, Millimeter waves, Power combining, FET modeling, FET characterization, GaAs Integrated circuits, and Magnetostatic waves.
- Electrical and Electronic Equipment