Transient Velocity Assessment in Gallium Arsenide, and of Other GaAs Characteristics Related to Device Functions
Semi-annual technical rept. Aug 1984-Feb 1985
OREGON GRADUATE CENTER BEAVERTON
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Reports on the first six months of the program, with four tasks in two general areas. Concerning submicron GaAs devices and the possibility of high speed operation by velocity overshoot or ballistic mechanisms, tasks were to assemble the pertinent literature now essentially done, and evaluate this - on which an interim evaluation is provided in the report to the effect that newly recognized scattering mechanisms make ballistic transport unlikely unless electron transit distances can be made less than some 100nm. This looks more feasible with vertically-oriented devices. The other two tasks were an assessment of literature and information concerning EL2 and other significant defect states in GaAs for which a substantial data base has been assembled, and participation in collaborative activities directed towards optimization of evaluation techniques for GaAs wafers to be used for FET and related integrated circuit purposes. Work to date indicates that the local population of the EL2 midgap donor is likely to have a direct effect on FET properties. Keywords include Gallium arsenide submicron devices, ballistic transport, velocity saturation Semiconductor substrate evaluation Semi-insulating materials and Electron defect evaluation.
- Solid State Physics