Accession Number:

ADA156325

Title:

Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors.

Descriptive Note:

Annual rept. 1 Nov 83-31 Oct 84,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE

Personal Author(s):

Report Date:

1985-04-15

Pagination or Media Count:

14.0

Abstract:

This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanisms in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on i Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction RHEED intensities ii a theory of laser--induced-desorption iii Experimental studies of the RHEED intensity dynamics for GaAsInxGa1-xAs100 MBE growth iv the first realization of GaAsInAs strained layer structures with 7.4 lattice mismatch and transmission electron microscopy studies showing high quality interfaces, and v establishment of a facility for magneto-absorption studies.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE