HgCdTe Surface and Defect Study Program.
Interim technical rept. no. 3, Jan-Jul 84,
SANTA BARBARA RESEARCH CENTER GOLETA CALIF
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This report presents program results for the six-month period ending July 1, 1984. The results presented include determination of the sources of charge at the PhotoxHgCdTe interface measurement and comparison of atomic concentration vs. depth and electrical activity due to nuclear stopping for random and channeled implants using SIMS and C-V techniques respectively evaluation of changes in bulk trapping levels near the processing altered interface by DLTS identification and evaluation of new trap levels introduced by implantation damage by DLTS measurement of surface band structure continued bond length calculations results of TEM examination of the CdTeHgCdTe interface and finally calculations of dislocation energy and hardness. Author
- Solid State Physics