Electrotransport in Thin Films.
Final rept. 1981-1985,
FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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Circuit failure in thin film metallization may be due to a combination of electrotransport, thermotransport and grain boundary grooving. In cases where electrotransport and thermotransport are relatively slow, such as in gold, grain boundary grooving may eventually cause void formation and failure of a microelectronic device. Film combinations consisting of substrateindiumgold significantly retard grain growth, thermal grooving and hole formation under conditions usually experienced in microelectronic circuits. It is believed that indium oxide near the grain boundaries and on the surface is responsible for the stabilization of the gold grain structure and the prevention of hole formation. Keywords Electrotransport Thin films Metallization Reliability Microelectronic circuits Thermotransport Grain boundary grooving. Author
- Physical Chemistry