Accession Number:

ADA155222

Title:

Determination of Kinetic Parameters of Molecular Beam Epitaxy,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1985-04-17

Pagination or Media Count:

16.0

Abstract:

A kinetic growth model for molecular beam epitaxy MBE was discussed. Furthermore, high energy electron diffraction HEED was used as a surface characterization method to provide evidence for this model. GaAs was used as an example to study the growth rate of molecular beam epitaxy. The relation between the growth rate and the flux of Ga was verified by quadrupole mass spectroscopy. The suitable Ga to Al partial pressure ratio for growing materials such as Ga1-xalxAs with specific values of x was investigated theoretically as well as experimentally. Furthermore, the relation between dopant concentration and the corresponding effusion cell temperature was given for Si, Sn and Be. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE