Accession Number:

ADA155031

Title:

A Review of the Physics and Response Models for Burnout of Semiconductor Devices.

Descriptive Note:

Final rept.,

Corporate Author:

LAWRENCE LIVERMORE NATIONAL LAB CA

Personal Author(s):

Report Date:

1984-12-01

Pagination or Media Count:

89.0

Abstract:

Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE