Accession Number:

ADA151995

Title:

A Study of Ga(.47)In(.53)As and Al(.48)In(.52)As for Very High Frequency Device Applications.

Descriptive Note:

Final rept. 1 Nov 81-31 Oct 84,

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Eastman,L. F.
• Wicks,G. W.
• Woodard,D. W.

Report Date:

1985-01-01

Pagination or Media Count:

8.0

Abstract:

GaInAsAlInAs modulation doped structures grown by molecular beam epitaxy MBE were studied. The parameters of the MBE growth were adjusted to give high room temperature mobilities -12000 sq cmv-sec and high sheet electron concentrations 2 x 10 to the 12th power per sq cm. Because of higher electron velocities and high conductivities GaInAs modulation doped transistors should be significantly higher speed than those of GaAs. Originator-Supplied keywords include Gallium indium arsenide, Aluminum indium arsenide, Indium phosphide, Modulation doping, Two dimensional electron gas, Field effect transistor, and Molecular beam epitaxy.

Descriptors:

• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• *ALUMINUM ARSENIDES
• *INDIUM PHOSPHIDES
• VELOCITY
• MOBILITY
• TWO DIMENSIONAL
• EPITAXIAL GROWTH
• ELECTRON GAS
• MOLECULAR BEAMS
• ROOM TEMPERATURE
• ELECTRONS
• ARSENIDES
• DOPING
• MODULATION
• INDIUM COMPOUNDS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE