Accession Number:

ADA151695

Title:

Fabrication and I-V Characterization of AlGaAs/GaAs MODFETs with P-Type Surface Layers Grown by Molecular Beam Epitaxy.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

• Szabo,K.

Report Date:

1984-12-01

Pagination or Media Count:

116.0

Abstract:

The effects of highly doped p surface layers on the Schottky barrier of n-type AlGaAsGaAs MODFETs Modulation doped FETs were investigated for this thesis. Normal AlGaAsGaAs MODFET structures were first grown on top of semi-insulating GaAs structures using molecular beam epitaxy MBE and then thin p 50 A surface layers were grown on top of the MODFET structures. Two different sequential evaporations AuNiAuGeNi, AuNiAuGe were used for the sourcedrain contacts. The results show that these two sequential evaporations do not work on MODFETs with p surface layers. High resistance, rectifying sourcedrain contacts resulted. Originator-supplied keywords include Aluminum gallium arsenide, Heterojunctions, Field effect transistors, and Schottky barrier devices.

Descriptors:

• *ALUMINUM GALLIUM ARSENIDES
• *EPITAXIAL GROWTH
• LAYERS
• RESISTANCE
• THESES
• FIELD EFFECT TRANSISTORS
• SEQUENCES
• MOLECULAR BEAMS
• SURFACES
• N TYPE SEMICONDUCTORS
• EVAPORATION
• SCHOTTKY BARRIER DEVICES
• P TYPE SEMICONDUCTORS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE