Accession Number:

ADA151430

Title:

Hollow Cathode Reactive Sputter Etching - A New High-Rate Process,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Personal Author(s):

• Horwitz, C. M.

Report Date:

1983-11-01

Pagination or Media Count:

3.0

Abstract:

A new rf sputter etching configuration is described which enables SiO2 rates as high as 12 nms 0.72 micrometers to be obtained at CF4 pressures as low as 0.1 Pa 0.75 mTorr with 3.8-6.4 Wsqcm and 1.5 peak to peak applied to the etched sample. Comparing these etch rates with standard reactive sputter etching at 1.5 kV peak-to-peak applied rf voltage, the present etch rates are a factor of 100 higher at 0.1Pa 0.75 MTorr and a factor of 10 higher at 10Pa 75 m Torr. The new configuration consists of two closely spaced electrodes, connected electrically together as an etching target. These electrodes correspond to the hollow cathode used in dc discharges, and an intense discharge forms in between them. Here the etching properties of this configuration are demonstrated using CF4 over 0.1-10Pa pressure range and with applied rf voltage varied from 0.5 to 1.5 kV peak-to-peak.

Descriptors:

• *CATHODES
• *ELECTRODES
• *SPUTTERING
• ETCHING
• HIGH RATE
• PROCESSING
• RADIOFREQUENCY
• RATES
• REPRINTS
• VOLTAGE

Subject Categories:

• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE