High Mobility Hole Gas and Valence-Band Offset in Modulation-Doped p- AlGaAs/GaAs Heterojunctions,
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Modulation-doped p-AlGaAsGaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 sw cm per V per sec has been obtained at 4.2 K for a sheet density of 1.7 x 10 to the 11th power per sq cm. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210 or - 30 meV was deduced for Al0.5Ga0.5AsGaAs heterojunctions. Originator-supplied keywords include Hole gas, modulation-doping, Band Offset, GaAsAlxGaxAs, and Mobility.
- Inorganic Chemistry
- Nuclear Physics and Elementary Particle Physics