Accession Number:

ADA149968

Title:

High Mobility Hole Gas and Valence-Band Offset in Modulation-Doped p- AlGaAs/GaAs Heterojunctions,

Descriptive Note:

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1984-09-15

Pagination or Media Count:

4.0

Abstract:

Modulation-doped p-AlGaAsGaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 sw cm per V per sec has been obtained at 4.2 K for a sheet density of 1.7 x 10 to the 11th power per sq cm. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210 or - 30 meV was deduced for Al0.5Ga0.5AsGaAs heterojunctions. Originator-supplied keywords include Hole gas, modulation-doping, Band Offset, GaAsAlxGaxAs, and Mobility.

Subject Categories:

  • Inorganic Chemistry
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE