Investigation of Device and Electronic Interactions in GaAs Device Processing.
Annual technical rept. 15 Aug 83-14 Aug 84,
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Pagination or Media Count:
Our Investigation of Defects and Electronic Interactions Associated with GaAs Device Processing has been designed as a three year program with first year tasks focussing on the effects of thermal annealing. During this one year period August 15, 1983 - August 14, 1984 we have modified the design of the annealing ampul in order to achieve stoichiometry controlled annealing conditions and we have completed the construction of the ultra-high purity annealing apparatus cosponsored by a grant from Microgravity Research Associates. Our study of as-grown and annealed GaAs crystals has led to the identification of new defect related midgap levels. We have also discovered that defect interactions in a critical temperature range 800 C to 900 C are controlled by stoichiometry and by the Fermi Energy. We have initiated a collaborative study with Avionics Laboratory of the Wright Patterson Base on ion implantation and defect characterization by the photoluminescence technique. The results of our activity are contained in this report.
- Solid State Physics