Accession Number:

ADA149747

Title:

Investigation of Device and Electronic Interactions in GaAs Device Processing.

Descriptive Note:

Annual technical rept. 15 Aug 83-14 Aug 84,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1984-08-14

Pagination or Media Count:

11.0

Abstract:

Our Investigation of Defects and Electronic Interactions Associated with GaAs Device Processing has been designed as a three year program with first year tasks focussing on the effects of thermal annealing. During this one year period August 15, 1983 - August 14, 1984 we have modified the design of the annealing ampul in order to achieve stoichiometry controlled annealing conditions and we have completed the construction of the ultra-high purity annealing apparatus cosponsored by a grant from Microgravity Research Associates. Our study of as-grown and annealed GaAs crystals has led to the identification of new defect related midgap levels. We have also discovered that defect interactions in a critical temperature range 800 C to 900 C are controlled by stoichiometry and by the Fermi Energy. We have initiated a collaborative study with Avionics Laboratory of the Wright Patterson Base on ion implantation and defect characterization by the photoluminescence technique. The results of our activity are contained in this report.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE