1.5 TO 1.7 Micrometers LEDs (Light-Emitting Diode).
Final technical rept. 1 Jul 81-30 Jun 82,
DAVID SARNOFF RESEARCH CENTER PRINCETON NJ
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This report describes research undertaken to develop InGaAsPInP Light Emitting Diodes LEDs that emit light in the 1.5 - 1.7 micrometer spectral regions. These devices were to be optimized for the best coupling to optical fibers and for high-speed operation. The double-barrel vapor-phase-epitaxy reactor was used to fabricate most of these devices. Both antireflective AR and six-layer dielectric-stack reflective R facet coatings were developed for 1.3 and 1.55 micrometer LEDs. Reflectivities as high as 95 R and as low as 3 AR were measured at both wavelengths. Measured coupled power from fiber-coupled InGaAsPInP LEDs 50 micrometer core, 0.2 numerical aperature NA, graded index GI fiber includes values of 41 microwatts at 1.42 micrometers, 56 microwatts at 1.55 micrometers, and 11 microwatts at 1.65 micrometers.
- Electrooptical and Optoelectronic Devices