Optically Bistable Devices Using Semiconductor Materials.
Final technical rept. Feb 82-Feb 83,
HERIOT-WATT UNIV EDINBURGH (SCOTLAND) DEPT OF PHYSICS
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This report covers work conducted from February 1982 to February 1983 on the nonlinear optical properties of semiconductors using tunable bandgap resonant laser sources. Emphasis is on Carbon Monoxide CO Indium Antimonides InSb at 77K, but an optical parametric amplifier is constructed for future work on systems at shorter wavelengths. The Optical Bistability and device properties of InSb have been investigated. Operation of a slice of InSb, held at 77K, pumped by a continuous wave CO laser, as an optical AND gate, triggered by 30 ps pulses at wavelength 1.06 micron with energies of 5 nJ, is demonstrated. By using temporal separation of the trigger pulses, information on the carrier dynamics is obtained. The design and construction of an angle tuned Optical Parametric Amplifier consisting of a lithium niobate crystal pumped by a 30 ps pulse from a neodymium YAG laser has been achieved.
- Electrical and Electronic Equipment
- Lasers and Masers