Use of Alternative Solvents for the Low-Temperature LPE Growth of CdTe Films.
ROYAL SIGNALS AND RADAR ESTABLISHMENT MALVERN (ENGLAND)
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The use of alternative solvents, in particular Bi and In, has been investigated for the LPE growth of CdTe thin films at temperatures down to 250 C. In comparison with earlier work using Te as the solvent, this approach has several benefits i improved surface topography, ii more complete solution removal, iii more abrupt interfaces, and iv improved electrical properties. SIMS measurements showed that the layers grown from Bi solutions contained 0.1 ppma Bi, while those grown from In solutions contained approx. 100 ppma In. Doping experiments using In, Sb, and As were performed using Bi as the solvent.