Quaternary Narrow-Band Semiconductors (HgTe)x(InSb)1-x for Far-Infrared Detectors.
Annual interim rept. 1 Sep 83-31 Aug 84,
SAN DIEGO STATE UNIV FOUNDATION CA
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This annual report includes a description of results from work on investigation of the quaternary system HgTe InSb. The special furnaces for synthesis of the polycrystalline specimens in the system HgTe-InSb were made, the optimal ampules for synthesis and differential thermal analysis were designed, and the appropriate equipment for the specimen assessment was bought for adjusted. On the basis of the results of several first cycles of synthesis, the temperature-time regime for single-phase polycrystal synthesis, was developed. The single-phase ingots were synthesized with the vast range of composition, but the primary interest was concentrated upon synthesizing the single-phase specimens in the part of the concentration diagram which contains semiconductor alloys from 100 to 80 mole InSb where the absorption edge range from 7 micrometer to 12 micrometer is expected. Synthesized specimens were used for microstructure analysis, differential thermal analysis DTA and x-ray analysis. Measurements of microhardness were used to proof the single-phase structure of the specimens. The alloy specimen assessment included also electrical, galvano-magnetic and optical measurements in the IR part of the spectrum. The sum of the results is used to develop the phase diagram of the semiconductor part of the HgTe InSb system, the diagrams composition-property for lattice parameters, concentration and mobility of the current carriers, and for the absorption edge in the infrared part of the spectrum. The main purpose of this project is the development of growth techniques for crystals and epitaxial layers of HgTe InSb.
- *INFRARED DETECTORS
- OPTICAL PROPERTIES
- STRUCTURAL PROPERTIES
- EPITAXIAL GROWTH
- X RAYS
- FAR INFRARED RADIATION
- DIFFERENTIAL THERMAL ANALYSIS
- Infrared Detection and Detectors
- Solid State Physics