Accession Number:

ADA149339

Title:

Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Descriptive Note:

Annual technical rept. 1 Sep 83-31 Aug 84,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1984-08-31

Pagination or Media Count:

57.0

Abstract:

The dopants of B, P, N, and Al have been added to CVD grown beta-Silicon carbide thin films during growth and via ion implantation. A thermodynamic study has also been pursued to determine the gas phases and their partial pressures in equilibrium with the SiH4, C2H4, and H2 used to deposit the Silicon carbide. Annealing studies have shown that very high temperatures 1750 C are necessary to activate the implanted species. Oxidation studies, plasma etching, electrical property measurements and device fabrication have also been conducted. Silicon carbide is the only compound species that exists in the solid state in the Si-C system and can occur in the cubic C, hexagonal H or rhombohedral R structures. It is also classified as existing in the beta and alpha modifications. The beta, or cubic, form crystallizes in the zincblende or sphalerite structure whereas, a large number approximately 140 of the alpha occur in the hexagonal or rhombohedral forms known as polytypes.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE