Temperature-Dependent Surface States and Transitions of Si(111)-7x7.
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Ultraviolet photoemission and electron-energy-loss measurements of Si111 - 7x7 between T 15 and 300 K reveal significant temperature-dependent changes in the occupied surface states and their transitions which can be associated with electron-phonon coupling at the surface. Several new surface states and transitions are determined at low temperatures, including a highly localized about 2-meV-wide, half-occupied state that resides within a 100-meV-wide surface-state band gap and determines the Fermi-level position.
- Solid State Physics