Accession Number:

ADA149156

Title:

Temperature-Dependent Surface States and Transitions of Si(111)-7x7.

Descriptive Note:

Technical rept.,

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1984-09-01

Pagination or Media Count:

7.0

Abstract:

Ultraviolet photoemission and electron-energy-loss measurements of Si111 - 7x7 between T 15 and 300 K reveal significant temperature-dependent changes in the occupied surface states and their transitions which can be associated with electron-phonon coupling at the surface. Several new surface states and transitions are determined at low temperatures, including a highly localized about 2-meV-wide, half-occupied state that resides within a 100-meV-wide surface-state band gap and determines the Fermi-level position.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE