Surface and Interfacial Properties of Ga(0.47)In(0.53)As Alloys.
Final rept. 1 Apr 83-30 May 84,
CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES
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Semiconducting Ga0.47In0.53As layers whose lattice constants match that of semi-insulating InP are, potentially, useful for discrete and integrated circuit microwave transistors and opto-electronic sensors compatible with the low loss, low dispersion spectral window of optical fibers. Their implementation requires evaluation, modelling and interpretation of the surface and interfacial properties of this ternary semiconducting compound in terms of fundamental physical parameters. We have investigated by means of field effect-controlled galvanomagnetic measurements the properties of the dielectric-semiconductor interface of 100-oriented n-type Ga0.47In0.53As, compared these to theoretical calculations made for its free non-polar surface and to experimental measurements made by others on metal-insulator-semiconductor capacitors. Our results suggest that the equilibrium position of the surface Fermi level is not a strong function of crystallographic orientation and it is in good agreement with theoretical expectations, that the surface charge is slightly accumulated 0.1 eV from flatband at room temperature and the surface potential can be displaced over most of the fundamental bandgap across flatband into accumulation and that, just as for silicon, the electron mobility decreases with increasing accumulation surface charge in accordance with preliminary theoretical arguments.
- Solid State Physics