Materials-Process Interactions in Ternary Alloy Semiconductors.
Quarterly rept. no. 5, 1 May-31 Jul 83,
HUGHES RESEARCH LABS MALIBU CA
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The report describes the properties of InGaAs and the results of detailed x-ray photo-electron and electron energy loss XPS, ELS spectroscopies on In 0.53 Ga 0.47 As samples. The results show that in this alloy system, the native oxide consists of As2O3 and oxides involving In. Oxides involving Ga with other elements are also present.
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics