Accession Number:

ADA148777

Title:

Materials-Process Interactions in Ternary Alloy Semiconductors.

Descriptive Note:

Quarterly rept. no. 5, 1 May-31 Jul 83,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Report Date:

1983-09-01

Pagination or Media Count:

17.0

Abstract:

The report describes the properties of InGaAs and the results of detailed x-ray photo-electron and electron energy loss XPS, ELS spectroscopies on In 0.53 Ga 0.47 As samples. The results show that in this alloy system, the native oxide consists of As2O3 and oxides involving In. Oxides involving Ga with other elements are also present.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE