Optimisation of the Thermoelectric Figure of Merit in Fine Grained Semiconductor Materials Based upon Lead Telluride.
Periodic rept. no. 1, Oct-Dec 82,
UNIVERSITY OF WALES INST OF SCIENCE AND TECHNOLOGY CARDIFF DEPT OF PHYSICS ELECTRONICS/ELECTRICAL ENGRG
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The programme of work follows that set out in the initial report and it is proceeding on schedule. A model has been formulated for the lead telluride system and the effect of phonon-grain boundary scattering, doping and alloying on the lattice thermal conductivity of lead telluride investigated. The preliminary results of this work are embodied in the attached paper. The paper entitled The Effect of Phonon-Grain Boundary Scattering, Doping and Alloying on the Lattice Thermal Conductivity of Lead Telluride has been submitted for publication in Journal of Physics D. The main conclusion we reach is that in moderately doped materials with a grain size of 1 micrometer, the reduction in lattice thermal conductivity would be in the range 4 to 6 per cent for unalloyed lead telluride and 11 to 13 per cent for highly disorded alloys.
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