Accession Number:

ADA148710

Title:

Optimisation of the Thermoelectric Figure of Merit in Fine Grained Semiconductor Materials Based upon Lead Telluride,

Descriptive Note:

Initial rept.,

Corporate Author:

UNIVERSITY OF WALES INST OF SCIENCE AND TECHNOLOGY CARDIFF DEPT OF PHYSICS ELECTRONICS/ELECTRICAL ENGRG

Personal Author(s):

Report Date:

1982-09-01

Pagination or Media Count:

3.0

Abstract:

It has been reported that grain boundary scattering has a significant effect in reducing the lattice thermal conductivity of silicon germanium alloys. This phenomenon does not appear to be accompanied by a deterioration in the other parameters which occur in the thermoelectric figure of merit. Consequently, small grain size silicon germanium alloys exhibit a higher figure of merit than comparable single crystal or large grain size material. Although grain boundary scattering of phonons is particularly favoured in silicon germanium alloys because the large difference in atomic masses of the constituent atoms give rise to substantial alloy disorder scattering, this phenomenon will also be present in other thermoelectric semiconductor alloys.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE