Ion Implantation in III-V Compound Semiconductors
Final technical rept. 1 Aug 1980-31 Dec 1983,
AIR FORCE WRIGHT AERONAUTICAL LABS WRIGHT-PATTERSON AFB OH AVIONICS LAB
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The goal of this program was to address the basic and applied problems associated with a ion implantation doping of GaAs, b device isolation by ion implantation in GaAs, and c Ohmic contact in GaAs. This report presents results of detailed investigation conducted by using various techniques. These results provide an understanding of the interactions of implanted ions with pre-implant impurities and nature of defects the effect of various annealing procedures an activation efficiency, profile distribution, lattice incorporation, and residual damage. A clear indication of the importance of defect complexes in ion implanted GaAs has resulted from this work. Formation of high resistivity layers in n-type GaAs be oxygen implantation has been demonstrated. Systematic studies have been performed to compare surface morphologies, compound formation and diffusion behavior of Au, Au-Ge, and Au-Ge- Ni on GaAs.
- Solid State Physics