Characterization of Thermally Treated Gallium Arsenide by Laser-Raman and Auger Spectroscopy.
Final rept. Mar-Dec 83,
AIR FORCE WRIGHT AERONAUTICAL LABS WRIGHT-PATTERSON AFB OH
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Thermally treated 100 gallium arsenide crystals were characterized by Raman and Auger spectroscopy. Studies were carried out at intervals between 200 and 750 C. It was difficult to detect any oxide films at temperatures below 450 C by Raman spectroscopy. Films grown at 450 C were homogeneous and 240A thick. Both Raman and Auger spectroscopy indicate the films consist of gallium oxide and crystalline arsenic dispersed throughout the film. A white dense film was grown at 750 C and Raman data indicated it was primarily beta gallium oxide.